| PART |
Description |
Maker |
| MT49H8M32 MT49H8M32FM |
REDUCED LATENCY DRAM RLDRAM
|
Micron Technology
|
| HYB18RL25632AC HYB18RL25616AC |
256 Mbit DDR Reduced Latency DRAM
|
INFINEON[Infineon Technologies AG]
|
| LTC2421 LTC2422 LTC2421CMS LTC2422CMS LTC2422IMS L |
1-/2-Channel 20-Bit UPower No Latency ADCs in MSOP-10
2-Ch 8ppm INL, 1.2ppm Noise, No Latency Delta Sigma, MS10
8ppm INL, 1.2ppm Noise, 20-Bit No Latency Delta Sigma, MS10
1-/2-Channel 20-Bit Power No Latency DeltaSigmaADCs in MSOP-10
1-/2-Channel 20-Bit µPower No Latency DeltaSigma™ ADCs in MSOP-10
|
LINER[Linear Technology]
|
| SI4860DY |
N-Channel MOSFET, 30V(D-S) , Reduced Qg, Fast-Switching N沟道MOSFET0V（D-S），Qg，快速开
N-Channel Reduced Qg, Fast Switching MOSFE
|
Vishay Intertechnology, Inc.
Vishay Siliconix
|
| LTC2415-1 LTC2415 LTC2415IGN LTC2415CGN LTC2415-1C |
24-Bit No Latency ADCs with Differential Input and Differential Reference
24-Bit No Latency Delta Sigma ADC with Differential Input and Differential Reference
24-Bit No Latency Delta Sigma ADC with Differential Input, 50/60Hz Rejection
|
LINER[Linear Technology]
|
| SI7392DP-T1 SI7392DP |
N-Ch. Reduced Qg, Fast Switching WFET® VDS = 30V; VGS = ± 20V N沟道Qg，快速开关WFET ® ，VDS=30V; VGS=±20V
N-Channel Reduced Qg, Fast Switching WFET
N-Channel Reduced Qg/ Fast Switching WFET
|
Vishay Intertechnology, Inc.
VISAY[Vishay Siliconix]
|
| LTC2436-1CGN LTC2436-1IGN LTC2436-1 LTC2436-1-15 |
2-Channel Differential Input 16-Bit No Latency ADC
2-Channel Differential Input 16-Bit No Latency DS ADC 2-CH 16-BIT DELTA-SIGMA ADC, SERIAL ACCESS, PDSO16
2-Channel Differential Input 16-Bit No Latency DS ADC
|
Linear Technology Corporation
Linear Technology, Corp.
|
| CY7C1165V18 CY7C1163V18 CY7C1161V18 CY7C1176V18 CY |
18-Mbit QDRII SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency) 2M X 9 QDR SRAM, 0.45 ns, PBGA165
18-Mbit QDRII SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency) 18兆位的国防评估报告⑩- II SRAM字突发架构（2.5周期读写延迟
18-Mbit QDR??II SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency)
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| 120NQ600-1 |
Reduced RFI and EMI
|
Sangdest Microelectroni...
|
| CY7C1145V18-300BZXC CY7C1156V18-300BZXC CY7C1141V1 |
18-Mbit QDR垄芒-II SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency)
18-Mbit QDR?II SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency)
|
Cypress Semiconductor
|
